Hostname: page-component-54dcc4c588-tfzs5 Total loading time: 0 Render date: 2025-09-16T02:34:39.362Z Has data issue: false hasContentIssue false
  • English
  • Français

Temperature Dependence and Annealing Behaviour of Hf Implanted (100)Si: HfSi 2 Synthesis

Published online by Cambridge University Press:  15 February 2011

M. R. Da Silva ,
A. A. Melo ,
J. C. Soares ,
M. F. Da Silva ,
R. Moons ,
G. Langouche ,
A. Vantomme ,
O. Conde ,
Y.-C. Lu  and
H. Kung
M. R. Da Silva
Affiliation:
Centro de Física Nuclear da Univ. de Lisboa, Av. Prof. Gama Pinto, 2, 1699 Lisboa, Portugal
A. A. Melo
Affiliation:
Centro de Física Nuclear da Univ. de Lisboa, Av. Prof. Gama Pinto, 2, 1699 Lisboa, Portugal
J. C. Soares
Affiliation:
Centro de Física Nuclear da Univ. de Lisboa, Av. Prof. Gama Pinto, 2, 1699 Lisboa, Portugal
M. F. Da Silva
Affiliation:
Departamento de Física - ITN, P-2865 Sacavém, Portugal
R. Moons
Affiliation:
University of Leuven - Inst. voor Kern-en Stralingsfysica, Celestijnenlaan 200D, B-3001 Leuven, Belgium
G. Langouche
Affiliation:
University of Leuven - Inst. voor Kern-en Stralingsfysica, Celestijnenlaan 200D, B-3001 Leuven, Belgium
A. Vantomme
Affiliation:
University of Leuven - Inst. voor Kern-en Stralingsfysica, Celestijnenlaan 200D, B-3001 Leuven, Belgium
O. Conde
Affiliation:
Departamento de Ffsica - Faculdade de Ciencias da Universidade de Lisboa, Ed C I, Campo Grande, P- 1700 Lisboa Portugal
Y.-C. Lu
Affiliation:
Centre for Materials Science-Los Alamos National Lab., Los Alamos, New mexico, U.S.A.
H. Kung
Affiliation:
Centre for Materials Science-Los Alamos National Lab., Los Alamos, New mexico, U.S.A.
Get access

Abstract

We investigated the formation of a buried HfSi2 layer by high fluence ion implantation of isotopically mass separated 179–180 Hf+ on heated silicon (100) substrates. It is shown that for the substrate temperature of 600°C a buried HfSi 2 layer is formed. By subsequent annealing at 1000 °C a continuous 12 nm HfSi2 layer on the Si surface is formed followed by 130 nm big almost spherodized HfSi2 ellipsoid and 80 nm small HfSi2 and Si grains. The annealing of samples implanted at lower temperatures show that HfSi2 is also formed but with reduced yield. A summary of the relevant data is presented.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1. Ziegler, J.F., Mayer, J.W., Kircher, C.J. and Tu, K.N., J. App. Phys. 44, 3851 (1973).Google Scholar
2. Kircher, C.J., Mayer, K.W., Tu, K.N. and Ziegler, J.F., App. Phys. Lett. 22, 81 (1973).Google Scholar
3. Murarka, S.P. and Chang, C.C., App. Phys. Lett. 37, 639 (1980).Google Scholar
4. Chang, C.S., Nieh, C.W. and Chen, L.J., J. App. Phys. 61, 2393 (1987).Google Scholar