Hostname: page-component-cb9f654ff-mwwwr Total loading time: 0 Render date: 2025-09-07T06:08:36.040Z Has data issue: false hasContentIssue false
  • English
  • Français

Temperature Dependence of a-Si:H Nip Diodes

Published online by Cambridge University Press:  21 February 2011

C. van Berkel ,
M. J. Powell  and
I. D. French
C. van Berkel
Affiliation:
Philips Research Laboratories, Redhill, Surrey, RH1 5HA, England
M. J. Powell
Affiliation:
Philips Research Laboratories, Redhill, Surrey, RH1 5HA, England
I. D. French
Affiliation:
Philips Research Laboratories, Redhill, Surrey, RH1 5HA, England
Get access

Abstract

We analyse the temperature dependence of the forward characteristics of a-Si:H nip diodes, which are characterised by a well defined exponential region at low bias and space charge limited current at higher bias. At each bias, the temperature dependence of the diodes shows a well defined activation energy and a linear dependence on bias exists for both the activation energy and exponential prefactor. We describe these phenomena with a first order temperature expansion of the diode quality factor n and present a physical interpretation in terms of electron and hole recombination in the i-layer.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 369
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Togashi, S et al; Proc SID 26/1 9 (1985)Google Scholar
2. Baron, Y, Lien, A, Cannella, V, Mcgill, J Yaniv, Z, Proc of Japan Display 86 (SID) 68 (1986)Google Scholar
3. Sakai, H, Kamiyama, M, and Tanabe, E; Mat Res Soc Symp Proc 118 375 (1988)CrossRefGoogle Scholar
4. Nicholas, K H et al, Proceedings Eurodisplay 90 170 (1990)Google Scholar
5. Kuijk, K E; Proceedings Eurodisplay 90 174 (1990)Google Scholar
6. Chen, I and Lee, S; J Appl Phys 53 1045 (1982)CrossRefGoogle Scholar
7. Hack, M and Shur, M S; J Appl Phys 55 4413 (1984)Google Scholar
8. McMahon, T J and Madan, A; Mat Res Soc Symp Proc 49 287 (1985)CrossRefGoogle Scholar
9. Hegedus, S S, Salzman, N and Fagen, Edward; J Appl Phys 63 5126 (1988)CrossRefGoogle Scholar
10. Matsuura, H, Matsuda, A, Okushi, H ad Tanaka, K; J Appl Phys 58 1578 (1985)CrossRefGoogle Scholar
11. Miller, W A and Olsen, L C; IEEE Trans Elec Dev ED-31 654 (1984).CrossRefGoogle Scholar
12. Sze, S M, Physics of Semiconductor Devices, 2nd edition chapter 5, Wiley Interscience, New York 1981.Google Scholar
13. Mittiga, A, Fiorini, P, Falconieri, M and Evangelisti, F; J Appl Phys 66 2667 (1989)CrossRefGoogle Scholar
14. Oversluizen, G, van Kessel, R P, Nieuwesteeg, K J and Boogaard, J, J Appl Phys 69 3082 (1991)CrossRefGoogle Scholar
15. Okamoto, H, Kida, H, Nomura, S and Hamakawa, Y, Solar Cells 8 317 (1983)CrossRefGoogle Scholar
16. Taylor, G W and Simmons, J G, Phys Rev B 4 502 (1971)CrossRefGoogle Scholar