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Temperature dependent Emissivity Measurements of Si, SiO2/Si, and HgCdTe

Published online by Cambridge University Press:  22 February 2011

N.M. Ravindra ,
F.M. Tong ,
W.F. Kosonocky ,
J.R. Markham ,
S. Liu  and
K. Kinsella
N.M. Ravindra
Affiliation:
New Jersey Institute of Technology, Newark, NJ 07102
F.M. Tong
Affiliation:
New Jersey Institute of Technology, Newark, NJ 07102
W.F. Kosonocky
Affiliation:
New Jersey Institute of Technology, Newark, NJ 07102
J.R. Markham
Affiliation:
Advanced Fuel Research, Inc., East Hartford, CT 06108
S. Liu
Affiliation:
Advanced Fuel Research, Inc., East Hartford, CT 06108
K. Kinsella
Affiliation:
Advanced Fuel Research, Inc., East Hartford, CT 06108
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Abstract

The results of emissivity of (a) Si and SiO2 /Si in the temperature range of 320 to 1240 K and (b). HgCdTe at temperatures of 303 and 440 K, using Fourier Transform Infrared(FTIR) spectroscopy, in the wavelength range of 1.5 to 20 μm, have been reported here. The measurements on SiO2 /Si have been performed for oxide thickness ranging from 60 to 500 nm. These results coufled with calculations of emissivity from first principles lead us to model the wavelength dependence of emissivity. Emissivity estimates have been obtained for HgCdTe using its fundamental optical constants.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 342: Symposium G – Rapid Thermal and Integrated Processing III , 1994 , 431
Copyright
Copyright © Materials Research Society 1994

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References

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