Hostname: page-component-76fb5796d-2lccl Total loading time: 0 Render date: 2024-04-30T03:19:51.441Z Has data issue: false hasContentIssue false

TemperatÜRe Measurement by Infrared Transmission for Rapid Thermal Processing Applications

Published online by Cambridge University Press:  25 February 2011

J.C. Sturm
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, N.J. 08544
P.V. Schwartz
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, N.J. 08544
P.M. Garone
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, N.J. 08544
Get access

Abstract

We report a new non-invasive optical technique for the measurement of the absolute temperature of silicon wafers in a rapid thermal processing environment. The method is based on the temperature dependence of the infrared absorption of silicon. Unlike pyrometry, the method can be used with a quartz processing chamber, and it is well-suited to the temperature range of 400 °C to 800 °C. Temperature resolution on the order of one degree can be achieved, and the method can easily be applied to homoepitaxial and certain heteroepitaxial growth cycles.

Type
Research Article
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Sato, T., Japan. J. Appl. Phys. 6, 339 (1967).Google Scholar
2 Quartz applications note from General Electric.Google Scholar
3 Gibbons, J.F., Gronet, C.M., and Williams, K.E., Appl. Phys. Lett. 47, 721(1985).Google Scholar
4 Thurmond, C.D., J. Electrochemical Soc. 122, 1133 (1975).Google Scholar
5 Handbook of Optical Constanta of Solidar E.D. Palik, ed., (Academic Press: Orlando) 1985.Google Scholar
6 Soref, R. A. and Bennett, B.R., IEEE J. Quant. Elect. QE–23, 123 (1987).Google Scholar
7 Available from Peak Systems, Fremont, CA.Google Scholar
8 Lukes, F., J. Phys. Chem. Solids 11, 342 (1959).Google Scholar