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Theoretical and Experimental Understanding of Charge-Injection GeTe/Sb2Te3Superlattice Phase Change Memory

Published online by Cambridge University Press:  09 June 2014

Norikatsu Takaura
Norikatsu Takaura*
Affiliation:
Low-power Electronics Association & Project, Onogawa, Tsukuba, Ibaraki, 305-8569, Japan
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Abstract

A charge-injection GeTe/Sb2Te3 superlattice phase change memory (PCM or PRAM) has been developed as a candidate for a non-volatile memory that replaces NAND flash memory. It differs from PRAM with the conventional material of GeSbTe, and is therefore named “TRAM (topological switching random access memory)”. First principle calculations showed a resistance change in the GeTe/Sb2Te3 superlattice was enhanced by charge injection. The fabrication and analyses of a one-resistor TEG revealed that the superlattice structure was maintained after 1M endurance, which proved the occurrence of non-melting resistance change in TRAM. The reset current of TRAM was found to be less than 1/5 of that of conventional PRAM. Furthermore, TRAM enables a set -speed of 10 ns and reset -operation by DC-sweep to be achieved, which experimentally proved the atomic movement in TRAM can be enhanced by charge injection.

Keywords

memoryphysical vapor deposition (PVD)transmission electron microscopy (TEM)
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1697: Symposium HH – Phase-Change Materials for Memory, Reconfigurable Electronics and Cognitive Applications , 2014 , mrss14-1697-hh09-01
Copyright
Copyright © Materials Research Society 2014 

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