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Theory of Optical Transitions in SinGen(001) Strained Layer Superlattices

Published online by Cambridge University Press:  26 February 2011

Mark S. Hybertsen  and
Michael Schlüter
Mark S. Hybertsen
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
Michael Schlüter
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

Systematic trends for the minimum gap and low-lying direct optical transitions for superlattices alternating 2, 4 or 6 atomic layers of Si and Ge grown on Si(001) and Ge(001) substrates are calculated using the local density functional approach. Results of a many-body self energy calculation for the optical transition energies of the Si4Ge4/Si(001) case are compared to photocurrent and electroreflectance data. Emphasis is placed on the narrow type II heterostructure formed by the Si4Ge4 region between the Si(001) substrate and cap layer.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 413
Copyright
Copyright © Materials Research Society 1988

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References

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