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Total Dielectric Isolation (TDI) of Device Islands Using SIMOX/SOI Technology

Published online by Cambridge University Press:  28 February 2011

P L F Hemment ,
A K Robinson ,
K J Reeson ,
J R Davis ,
J R Kilner ,
R J Chater  and
J Stoemenos
P L F Hemment
Affiliation:
Department of Electronic & Electrical Engineering, University of Surrey, Guildford, Surrey, U.K.
A K Robinson
Affiliation:
Department of Electronic & Electrical Engineering, University of Surrey, Guildford, Surrey, U.K.
K J Reeson
Affiliation:
Department of Electronic & Electrical Engineering, University of Surrey, Guildford, Surrey, U.K.
J R Davis
Affiliation:
BTRL, Martlesham Heath, Ipswich.
J R Kilner
Affiliation:
Imperial College, London.
R J Chater
Affiliation:
Imperial College, London.
J Stoemenos
Affiliation:
Department of Physics, University of Thessaloniki, Greece.
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Abstract

A method of achieving total dielectric isolation (TDI) of device islands (or larger areas) using ion beam synthesis to form a continuous but non planar layer of SiO2 is described. The technique involves implantation through a patterned masking layer in which windows have been opened to define the dimensions and location of the islands. TDI structures have been successfully formed in annealed (1300°C, 5 hours) wafers implanted with a dose of 2.2 x 1018 O+ cm2 at 200 keV, using a thermal oxide mask of thickness 4750 Å.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 107: Symposium H – Silicon-on-Insulator and Buried Metals in Semiconductors , 1987 , 87
Copyright
Copyright © Materials Research Society 1988

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References

1 Partridge, S.L., IEE Proc. Vol.133, Pt.E, No.3 (1986) 106.Google Scholar
2 Jastrzebski, L., RCA Review Vol.44, (1983) 250.Google Scholar
3 See, for example, Mat. Res. Soc. Sym. Proc. 33, (1984).CrossRefGoogle Scholar
4 Izumi, K., Doken, M. and Ariyoshi, H., Electron Letts 14, (1978) 593.CrossRefGoogle Scholar
5 Hemment, P.L.F., Mat. Res. Soc. Symp. Proc. 53, (1986) 207.CrossRefGoogle Scholar
6 See, for example, Mat. Res. Soc. Symp. Proc. 53, (1986).Google Scholar
7 Cristoloveanu, S., Inter. Conf. Physics and Technology of Amorphous SiO2, Les Arcs, France, July 1987.Google Scholar
8 Hemment, P.L.F., Reeson, K.J., Kilner, J.A., Chater, R.J., Marsh, C., Booker, G.R., Davis, J.R. and Celler, G.K., Nucl. Inst. Meths. B21, (1987) 129.CrossRefGoogle Scholar
9 Foster, D.J., Butler, A.L., Bolbot, P.H. and Alderman, J.A., IEEE ED–33, 3 (1986), 351.Google Scholar
10 Davis, J.R., Hopper, G.F., Reeson, K.J. and Hemment, P.L.F., IEEE ED–34, 8 (1987) 1713.Google Scholar
11 Jager, H.V., Nucl. Inst. Meths, B15, 1–6, (1986) 748.CrossRefGoogle Scholar
12 Ziegler, J.F., Biersack, J. and Littmark, V., The stopping and range of ions in solids, Pergaman 1985.Google Scholar
13 Jaussaud, C., Stoemenos, J., Margail, J., Dupuy, M., Blanchard, B. and Bruel, M., Appl. Phys. Letts. 46 (1985) 1064.CrossRefGoogle Scholar
14 Mao, B.Y., Chang, P.H., Wham, H., Shen, B.W. and Keenan, J.A., Appl. Phys. Lett. 48 (12) (1986) 794.CrossRefGoogle Scholar
15 Hemment, P.L.F., Reeson, K.J., Kilner, J.A., Chater, R.J., Marsh, C., Booker, G.R., Celler, G.K. and Stoemenos, J., Vacuum 36, 11/12 (1986) 877.CrossRefGoogle Scholar
16 Patent J. Alderman, GB2183905A, June 1987.Google Scholar