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Total Dielectric Isolation (TDI) of Device Islands Using SIMOX/SOI Technology

Published online by Cambridge University Press:  28 February 2011

P L F Hemment ,
A K Robinson ,
K J Reeson ,
J R Davis ,
J R Kilner ,
R J Chater  and
J Stoemenos
P L F Hemment
Affiliation:
Department of Electronic & Electrical Engineering, University of Surrey, Guildford, Surrey, U.K.
A K Robinson
Affiliation:
Department of Electronic & Electrical Engineering, University of Surrey, Guildford, Surrey, U.K.
K J Reeson
Affiliation:
Department of Electronic & Electrical Engineering, University of Surrey, Guildford, Surrey, U.K.
J R Davis
Affiliation:
BTRL, Martlesham Heath, Ipswich.
J R Kilner
Affiliation:
Imperial College, London.
R J Chater
Affiliation:
Imperial College, London.
J Stoemenos
Affiliation:
Department of Physics, University of Thessaloniki, Greece.
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Abstract

A method of achieving total dielectric isolation (TDI) of device islands (or larger areas) using ion beam synthesis to form a continuous but non planar layer of SiO2 is described. The technique involves implantation through a patterned masking layer in which windows have been opened to define the dimensions and location of the islands. TDI structures have been successfully formed in annealed (1300°C, 5 hours) wafers implanted with a dose of 2.2 x 1018 O+ cm2 at 200 keV, using a thermal oxide mask of thickness 4750 Å.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 107: Symposium H – Silicon-on-Insulator and Buried Metals in Semiconductors , 1987 , 87
Copyright
Copyright © Materials Research Society 1988

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