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Transient Annealing of Neutron-Transmutation-DopedSilicon

Published online by Cambridge University Press:  25 February 2011

C J Pollard ,
K G Barraclough  and
M S Skolnick
C J Pollard
Affiliation:
VLSI Technology Division, British Telecom Research Laboratories, Martlesham Heath, Suffolk, England
K G Barraclough
Affiliation:
VLSI Technology Division, British Telecom Research Laboratories, Martlesham Heath, Suffolk, England Royal Signals and Radar Establishment, Malvern, Worcestershire, England
M S Skolnick
Affiliation:
VLSI Technology Division, British Telecom Research Laboratories, Martlesham Heath, Suffolk, England Royal Signals and Radar Establishment, Malvern, Worcestershire, England
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Abstract

Scanning electron beam annealing has been used to study the annealing of NTDsilicon in the temperature range 600-1180°C. The annealing process has beenfound to be very rapid above 800°C, a 30 second anneal producing highlyuniform n-type material. Below this temperature, an initial drop followed bya progressive rise in sample resistivity with increasing anneal time isconsistent with phosphorus dopant activation and the formation of adefect-related acceptor complex.

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References

REFERENCES

1. H Herzer in Semiconductor Silicon ´77 (ed. Huff, R and Sirtl, E), Electrochem Soc, 1977, pl06 Google Scholar
2. Pollard, C J, Speight, J D and Barraclough, K G Mat Res Soc Symp Proc, Vol 13 (1983), p413 Google Scholar
3. M Tajima, Proc of 3rd International Conference on Neutron Transmutation Doping, Aug 27-29 1980, ed Guldberg, J, Plenum 1981, p377 Google Scholar
4. Sahu, K and Reddy, T Rs J Appl Phys, Vol 54 part 2 (1983), p706 Google Scholar
5. Meese, J M, Cowan, D L and Chandrasekhar, M IEEE Trans on Nuclear Science, Vol NS–26 part 6 (1979), p4858 Google Scholar