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Transient Processing of Titanium Silicides in a Non-IsothermalReactor

Published online by Cambridge University Press:  25 February 2011

C.S. Wei ,
J. Van Der Spiegel ,
J. Santiago  and
L.E. Seiberling
C.S. Wei
Affiliation:
Center for Chemical Electronics, Department of Electrical Engineering, University of Pennsylvania, Philadelphia, PA 19104
J. Van Der Spiegel
Affiliation:
Center for Chemical Electronics, Department of Electrical Engineering, University of Pennsylvania, Philadelphia, PA 19104
J. Santiago
Affiliation:
Physics Department, University of Puerto Rico, Rio Piedras, PR 00931
L.E. Seiberling
Affiliation:
Department of Physics, University of Pennsylvania, Philadelphia, PA 19104
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Abstract

Transient processing of titanium silicides on single-crystal Si in anon-isothermal reactor provides high quality films. Heat from quartz-hal?gentungsten lamps and a small temperature gradient act as driving forces forthe reaction. The temperature gradient, small compared to the concentrationgradient, shows negligible influence on the formation process. The influenceof sample reflectivity on the other hand is appreciable. From Xe+ markerexperiments, Si atoms are found to be the moving species either up or downthe temperature gradient. Small amount of TiSi as an intermediate phase isfound to be coexistent with TiSi2. The silicide formation of the implantedwafers is somewhat slower than that of the unimplanted wafers.

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References

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