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Ultrathin Soi Structures by Low Energy Oxygen Implantation*

Published online by Cambridge University Press:  28 February 2011

Fereydoon Namavar ,
E. Cortesi ,
B. Buchanan ,
J. M. Manke  and
N. M. Kalkhoran
Fereydoon Namavar
Affiliation:
Spire Corporation, Bedford, MA 01730–2396
E. Cortesi
Affiliation:
Spire Corporation, Bedford, MA 01730–2396
B. Buchanan
Affiliation:
Spire Corporation, Bedford, MA 01730–2396
J. M. Manke
Affiliation:
Spire Corporation, Bedford, MA 01730–2396
N. M. Kalkhoran
Affiliation:
Spire Corporation, Bedford, MA 01730–2396
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Abstract

Although silicon-on-insulator (SOI) materials made by standard energy (150–200 keV) SIMOX processes have shown great promise for meeting the needs of radiation hard microelectronics, there are still problems relating to the radiation hardness and economic viability of standard SIMOX. A low energy SIMOX (LES) process reduces cost and improves radiation hardness and increased throughput of any implanter because much smaller doses are required. In addition, the process is uniquely able to produce high quality thin SIMOX structures that are of particular interest for fully depleted device structures. In this paper, we address the formation of high quality ultrathin SIMOX structures by low energy implantation.

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Footnotes

*

This work was supported in part by the Department of Defense, Rome Air Development, Center/ESR, under contract no. F19628–90-C-0081.

References

REFERENCES

1. Pinizzotto, R.F., Mat. Res. Soc. Symp. Proc. 27, 265 (1984).CrossRefGoogle Scholar
2. Bumham, M.E. and Wilson, S.R., in Advanced Application of Ion Implantation SPIE 530, (1985).Google Scholar
3. Hemment, P.L.F., Mat. Res. Soc. Symp. Proc. 53, 207 (1986).CrossRefGoogle Scholar
4. Reeson, K.J., Robinson, A.K., Hemment, P.L.F., Marsh, C.D., Christensen, K.N., Booker, G.R., Chater, R.J., Kilner, J.A., Harbeke, G., Steigmeir, E.F., and Celler, G.K., Microelectronic Eng. 8, 163 (1988).CrossRefGoogle Scholar
5. Namavar, F., Budnick, J.I., Sanchez, F.H., and Hayden, H.C., Mat. Res. Soc. Symp. Proc. 45, 317 (1985).CrossRefGoogle Scholar
6. Hill, D., Fraundorf, P., and Fraundorf, G., J. Appl. Phys. 63, 4932 (1988).CrossRefGoogle Scholar
7. Namavar, F., Buchanan, B., Cortesi, E., and Sioshansi, P., Mat. Res. Soc. Symp. Proc. 147, 235 (1989).CrossRefGoogle Scholar
8. Namavar, F., Cortesi, E., Pinizzotto, R.F., and Yang, H., Mat. Res. Soc. Symp. Proc. 157, 179 (1990).CrossRefGoogle Scholar
9. Namavar, F., Cortesi, E., Buchanan, B., and Sioshansi, P., IEEE SOS/SOI Technology Conference Proc., 117 (1989).Google Scholar
10. Namavar, F., Cortesi, E., Kalkhoran, N.M., Manke, J.M., and Buchanan, B., IEEE SOS/SOI Technology Conference Proc., 49 (1990).Google Scholar
11. Namavar, F., Cortesi, E., Manke, J.M., Kalkhoran, N.M., and Buchanan, B., IEEE SOI Technology Conference Proc., 108 (1991).Google Scholar
12. Namavar, F., "A Proposal for Ultra Thin SOI by Low Energy Oxygen Implantation", submitted by Spire Corporation to ESD/Hanscom AFB 01731, July 1989, unpublished.Google Scholar
13. Namavar, F., Cortesi, E., and Sioshansi, P., Mat. Res. Symp. Proc. 128, 623 (1989).CrossRefGoogle Scholar