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Wafer Level Modeling of Electrochemical-Mechanical Polishing (ECMP)
Published online by Cambridge University Press: 01 February 2011
In this work, we propose a wafer level dynamic ECMP model based on time-evolving current density distributions across the wafer. The copper layer on the wafer surface is discretized, and the potential and current density distributions are calculated based on the applied voltage zones and metal film thicknesses across the wafer. The copper removal rate is proportional to the current density, and thus the copper thickness (and conductance) can be calculated as a function of position on the wafer and polish time. Using a time-stepping simulation, the model is able to capture the wafer level non-uniformity and time-dependence of ECMP removal. The model is also able to capture the time-varying voltage zones used in ECMP, and can be used to find optimal voltage zone control schemes to achieve improved wafer-level uniformity.
- Research Article
- MRS Online Proceedings Library (OPL) , Volume 991: Symposium C – Advances and Challenges in Chemical Mechanical Planarization , 2007 , 0991-C11-04
- Copyright © Materials Research Society 2007