Hostname: page-component-76fb5796d-dfsvx Total loading time: 0 Render date: 2024-04-30T04:17:42.255Z Has data issue: false hasContentIssue false
  • English
  • Français

Work Function Tuning of MoxSiyNz metal gate electrode for Advanced CMOS Technology

Published online by Cambridge University Press:  01 February 2011

Pommy Patel ,
Douglas A Buchanan  and
Robert M Wallace
Pommy Patel
Affiliation:
ppatel@ee.umanitoba.ca, University of Manitoba, Dept of Electrical and Computer Engineering, 75 Chancellor's circle, Winnipeg, R3T6C9, Canada
Douglas A Buchanan
Affiliation:
dabuchan@ee.umanitoba.ca, University of Manitoba, Dept of Electrical and Computer Engineering, Winnipeg, R3T6C9, Canada
Robert M Wallace
Affiliation:
rmwallace@utdallas.edu, University of Texas at Dallas, Dept. of Elect. Eng. and Physics, Richardson, Texas 75083, Richardson, TX, 75083, United States
Get access

Abstract

Due to continued transistor scaling, the work function tuning of metal gates has become important for advanced CMOS applications. The primary objective of this research is to understand the tuning of the MoxSiyNz (also referred to as MoSiN) gate work function through the incorporation of nitrogen. A molybdenum silicide (MoSi2) target was reactively sputtered in nitrogen (N2) and argon (Ar) plasma. The amount of nitrogen in the MoSiN films was varied by controlling the gas flow ratio, RN = N2/(N2+Ar). Capacitance-voltage (CV) and internal photoemission (IPE) measurements are used to extract the work function (ϕm) of the MoSiN gate. A decrease in the MoSiN work function was observed from ∼4.7eV to ∼4.4eV for an increase in the gas flow ratios from 10% to 40%. The SIMS depth profiles suggested a uniform distribution of nitrogen throughout the films. The XPS surface analysis confirmed a steady increase in the total nitrogen concentration in the MoSiN films as gas flow ratio was increased. The increase in N2 concentration corresponded directly with the lowering of the MoSiN work function. These results clearly demonstrated that the MoSiN work function maybe altered over ∼0.3 eV tuning window by adjusting the N2 concentration in these films.

Keywords

Monitridemicroelectronics
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1073: Symposium H – Materials Science of High-k Dielectric Stacks—From Fundamentals to Technology , 2008 , 1073-H01-07
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Taur, Y.. IEEE Trans on Electron Devices, 2001, vol. 48, pg 2861.Google Scholar
2. Li, T-L., Ho, W. L. Chen, H-B., Wang, H.C-H., Chang, C. Y. Hu, C. IEEE Trans, Electron Devices, 2006, vol. 53, no. 6, pg 1420.Google Scholar
3. Misra, V. IEEE Electron Device Letters, 2003, vol. 23, pg 354.Google Scholar
4. Lu, Q. Lin, R. Ranade, P. Yeo, Y. C. Meng, X. Takeuchi, H. IEDM Tech. Digest, 2000.Google Scholar
5. Mochizuki, T. Tsujimaru, T. Kashiwagi, M. Nishi, Y. IEEE - Solid-State Circuits, 1980, pg. 496–500.Google Scholar
6. Ranade, P. Choi, Y. Ha, D. Agarwal, A. Ameen, M. T.-J. King, IEDM, 2002 pg. 363–366.Google Scholar
7. Lander, R-J-P., Hooker, J. C. Van Zijl, J. P., Roozeboom, F. Maas, M. P. M. Tamminga, Y. Wolters, R., European Solid-State Devices Res. Conf, 2002, pg. 103–106.Google Scholar
8. Reid, J. Kolawa, E. Garland, C. Nicolet, M-A, Journal of Applied Physics, 1996, vol. 79, pg 1109–1115.Google Scholar
9. Zhao, P. Kim, J. Kim, M. J. Gnade, B. E. Wallace, R. M. SRC Techcon 2005, Portland, OR, October 24, 2005.Google Scholar
10. Powell, R. J. Journal of Applied Physics, 1970, vol. 41, issue-6, pg. 2424–2432 Google Scholar
11. Nicollian, E. H. and Brews, J. R. MOS Physics and Technology, John Wiley and Sons, New York 1982.Google Scholar
12. Felnhofer, D. Gusev, E.P., Buchanan, D.A., “Photocurrent Measurements for Oxide Charge Characterization of High-ê Dielectric MOS Capacitors., in press J. of Appl. Phys., Vol. 103, No.5 (2008).Google Scholar