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X-Ray Photoelectron Spectroscopy of Polytetrafluoroethylene Thin Films Grown by Pulsed Laser Deposition

Published online by Cambridge University Press:  01 January 1992

S. Ismat Shah
Affiliation:
Central Research and Development, Experimental Station, E. I. du Pont de Nemours and Company, P.O. Box 80356, Wilmington, DE 19880–0356
Graciela B. Blanchet
Affiliation:
Central Research and Development, Experimental Station, E. I. du Pont de Nemours and Company, P.O. Box 80356, Wilmington, DE 19880–0356
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Abstract

Polytetrafluoroethylene (PTFE) films were prepared by laser ablation of bulk PTFE targets using a Nd-YAG laser (4th. harmonic). Both low and high molecular weight PTFE targets were used. X-ray Photoelectron Spectroscopy of the deposited films indicates that under certain deposition conditions it is possible to transfer the material of correct composition from the target onto the substrate. Films ablated with lower laser fluence were fluorine deficient. Fluorine deficiency leads to the formation of CF, CHF, and crosslinked carbon impurities. The background gas in the deposition chamber does not seem to have much effect on the composition. Films deposited with either Ar or CF4 as the background gas have similar compositions. The oxygen concentration of the films decreases with the increase in the laser fluence. At the highest fluence used, 1.5 J/cm2, the O concentration was less than 1% regardless of the molecular weight of the target material.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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