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Addressing the Problems of Agglomeration, Surface Roughness and Crystal Imperfection in Soi Films

Published online by Cambridge University Press:  28 February 2011

S. Ramesh ,
A. Martinez ,
J. Petruzzello ,
H. Baumgart  and
Emil Arnold
S. Ramesh
Affiliation:
Philips Laboratories, North American Philips Corporation, Briarcliff Manor, New York 10510
A. Martinez
Affiliation:
Philips Laboratories, North American Philips Corporation, Briarcliff Manor, New York 10510
J. Petruzzello
Affiliation:
Philips Laboratories, North American Philips Corporation, Briarcliff Manor, New York 10510
H. Baumgart
Affiliation:
Philips Laboratories, North American Philips Corporation, Briarcliff Manor, New York 10510
Emil Arnold
Affiliation:
Philips Laboratories, North American Philips Corporation, Briarcliff Manor, New York 10510
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Abstract

We have designed and experimentally tested, under a wide variety of laser recrystallization conditions, a reliable encapsulation structure that prevents agglomeration and enables recrystallization of SOT films over a 100% wafer area. Our experiments indicate that the wetting characteristics of the structure can also improve the surface planarity of the recrystallized silicon. We also report a dramatic reduction in defect density and the non - occurrence of the characteristic branched subgrain boundary pattern under appropriate conditions of laser recrystallization.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 53 , 1985 , 45
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

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