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Adhesion Strength of CuCr Alloy Films to Polyimide

Published online by Cambridge University Press:  21 February 2011

E. C. Ahn
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, P.O.Box 201, Chongryang, Seoul, Korea
Jin Yu
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, P.O.Box 201, Chongryang, Seoul, Korea
I. S. Park
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, P.O.Box 201, Chongryang, Seoul, Korea
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Abstract

In the present work, CuCr alloys with varying Cr content were sputter deposited on polyimide films, and the metal/polyimide thin films were maintained under 85° C/85%R.H. (T/H) conditions for the reliability measurements. Results showed that the peel strength without T/H treatments increased proportionally with the Cr content in the CuCr alloy layer(x) up to 17 at. %, and then saturated. Among the samples studied, the peel strength decreased with hold time under T/H conditions for all the cases, but most drastically for the sample with x=8.5. The very poor peel strength of that sample (x=8.5) was attributed to the occurrence of interfacial failures which were thought to take place along Cr-oxide/polyimide interfaces.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1. Tummala, R.R. and Rymaszewski, E.J.; Microelectronics Packaging Handbook, VNR, NY, (1989)Google Scholar
2. Chung, T.G., Kim, Y.-H. and Yu, Jin; J. Adhesion Sci. and Technol., 8, 41, (1994)Google Scholar
3. Flitsch, R. and Shih, D.-Y.; J. Vac. Sci. and Technol., A8, 2376, (1990)Google Scholar
4. Jordan, J.L., Sanda, P.N., Morar, J.F., Kovac, C.A., Himpsel, F.J. and Pollak, R.A.; J. Vac. Sci. and Technol., A4, 1046, (1986)Google Scholar
5. Ohuchi, F.S. and Freilich, S.C.; J. Vac. Sci. and Technol., A4, 1039, (1986)Google Scholar
6. Chan, C.J., Chang, C.A., Farrell, C.E., and Schott, A.G.; Appl. Phys. Lett. 62, 654, (1993)Google Scholar
7. Ahn, E.C., Yu, Jin, Park, I.S.; unpublished dataGoogle Scholar