The adsorption-desorption of various cations at the silica-water interface is discussed in terms of electrical double layer and surface complexation models. Some experimentally determined surface equilibria constants from the literature are tabulated for Fe, Cu, and Mg. The adsorption phenomena of those cations onto silica gel is described using the stability calculation (STABCAL) computer program based on the suggested models.
A chemical oxide (silica) is grown on the silicon surface during the SC1 and/or SC2 processes. Adsorption of Fe, Cu, and Mg onto this chemical oxide is studied as a function of pH and compared to the modeling results. In general, there is a qualitative correlation between the experimental and modeling data, which can be used as a basis to develop a quantitative model for cation adsorption-desorption on the wafer surface.
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