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Advances in Ferroelectric Thin Film Research at Nec and in Japan

Published online by Cambridge University Press:  25 February 2011

S. Matsubara ,
S. Miyazaki ,
T. Sakuma  and
Y. Miyasaka
S. Matsubara
Affiliation:
NEC Corporation, 1-1, Miyazaki 4-chome, Miyamae-ku, Kawasaki, Kanagawa 216, Japan
S. Miyazaki
Affiliation:
NEC Corporation, 1-1, Miyazaki 4-chome, Miyamae-ku, Kawasaki, Kanagawa 216, Japan
T. Sakuma
Affiliation:
NEC Corporation, 1-1, Miyazaki 4-chome, Miyamae-ku, Kawasaki, Kanagawa 216, Japan
Y. Miyasaka
Affiliation:
NEC Corporation, 1-1, Miyazaki 4-chome, Miyamae-ku, Kawasaki, Kanagawa 216, Japan
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Abstract

High dielectric constant thin film capacitors for integrated circuits were fabricated with an LSI process. The capacitors comprized AI/TiN top electrode, Si3N4 interlayer insulator, SrTiO3 dielectric and Pt/barrier-metal/Si bottom electrode. Two types of capacitor structure were discussed on the basis of dielectric property and fabrication process. The TiN layer played an important role in suppressing degradation of insulating properties at elevated temperature, which was caused by a reaction between Al and SrTiO3. Breakdown strength larger than 6.6 MV/cm was obtained for 0.001 mm2 area capacitors. However, the strength decreased with increasing capacitor area. The area dependence may be due to surface defects which were introduced during the processes subsequent to SrTiO3 film deposition. The capacitance density of about 9 fF/μm2 was obtained for 150nm thick film. Recent activities of ferroelectric thin film research in Japan was given as well.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 243: Symposium G – Ferroelectric Thin Films II , 1991 , 281
Copyright
Copyright © Materials Research Society 1992

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