Crossref Citations
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Ritala, Mikko
and
Leskelä, Markku
2002.
Handbook of Thin Films.
p.
103.
Published online by Cambridge University Press: 16 February 2011
Recent advances in understanding the ALE (atomic layer epitaxy) growth of ZnSe, ZnS and ZnTe are reviewed. The Ideal ALE growth is obtained in the substrate temperature range of 250–350°C for ZnSe. In the ALE growth of ZnSe and ZnTe, a unique self-limiting mechanism is observed, in which the deposition rate saturates at 0.5 monolayer per cycle. Furthermore, applications of ALE of II–VI compounds to the growth of strained layer superlattices are also reviewed.