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Advances in the Realisation of GaN-Based Microcavities: Towards Strong Coupling at Room Temperature

Published online by Cambridge University Press:  01 February 2011

F. Semond
Affiliation:
CRHEA-CNRS, Rue Bernard Grégory, Sophia-Antipolis, F-06560 Valbonne, France.
D. Byrne
Affiliation:
CRHEA-CNRS, Rue Bernard Grégory, Sophia-Antipolis, F-06560 Valbonne, France.
F. Natali
Affiliation:
CRHEA-CNRS, Rue Bernard Grégory, Sophia-Antipolis, F-06560 Valbonne, France.
M. Leroux
Affiliation:
CRHEA-CNRS, Rue Bernard Grégory, Sophia-Antipolis, F-06560 Valbonne, France.
J. Massies
Affiliation:
CRHEA-CNRS, Rue Bernard Grégory, Sophia-Antipolis, F-06560 Valbonne, France.
N. Antoine-Vincent
Affiliation:
LASMEA-UMR 6602 UBP/CNRS, Université Blaise Pascal – Clermont-Ferrand II, F-63177 Aubière cedex, France.
A. Vasson
Affiliation:
CRHEA-CNRS, Rue Bernard Grégory, Sophia-Antipolis, F-06560 Valbonne, France.
P. Disseix
Affiliation:
CRHEA-CNRS, Rue Bernard Grégory, Sophia-Antipolis, F-06560 Valbonne, France.
J. Leymarie
Affiliation:
LASMEA-UMR 6602 UBP/CNRS, Université Blaise Pascal – Clermont-Ferrand II, F-63177 Aubière cedex, France.
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Abstract

In a recent paper [Phys. Rev. B 68, 153313 (2003)], we reported the first experimental observation of the strong coupling regime in a GaN-based microcavity. The λ/2 GaN optical cavity was grown by molecular beam epitaxy on a Si(111) substrate. The upper mirror is a SiO2/Si3N4 dielectric mirror and the silicon substrate acts as the bottom mirror. With such a relatively simple and low-finesse microcavity, a Rabi splitting of 31 meV was measured at 5K. On the basis of this very encouraging result, approaches to fabricate high-finesse GaN-based cavities exhibiting strong coupling with stable polaritons at room temperature are discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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References

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