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Afm Study of CeO2 Growth on Sapphire as a Buffer Layer for YBa2Cu3O7

Published online by Cambridge University Press:  15 February 2011

M. W. Denhoff ,
B. F. Mason ,
H. T. Tran  and
P. D. Grant
M. W. Denhoff
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, Canada KIA 0R6.
B. F. Mason
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, Canada KIA 0R6.
H. T. Tran
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, Canada KIA 0R6.
P. D. Grant
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, Canada KIA 0R6.
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Abstract

The structure of CeO2 films grown on (1102) sapphire and on YBCO thin films was investigated. The films reported on here were grown by pulsed excimer laser deposition and their surface structure was probed using atomic force microscopy. We found that CeO2 films grown on sapphire were epitaxial with a granular structure which is smooth on an atomic scale. We see evidence of a surface reconstruction on a very smooth CeO2 (100) oriented surface. At higher growth temperatures, three dimensional islands begin to form. When a CeO2 film is grown on top of a YBCO film, the growth mode is two dimensional. The steps in this layer by layer growth are a surprisingly large 2 nm. This is about equal to 4 times the CeO2 lattice constant. This step height appears to be temperature dependent.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 401: Symposium G – Epitaxial Oxide Thin Films II , 1995 , 339
Copyright
Copyright © Materials Research Society 1996

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