Skip to main content
×
Home
    • Aa
    • Aa

ALD of Al2O3 for Carbon Nanotube vertical interconnect and its impact on the electrical properties

Abstract
ABSTRACT

Because of their superior electronic properties and bottom-up growth mode, Carbon Nanotubes (CNT) may offer a valid alternative for high aspect ratio vertical interconnects in future generations of microchips. For being successful, though, CNT based interconnects must reach sufficiently low values of resistance to become competitive with current W or Cu based technologies. This essentially means that CMOS compatible processes are needed to produce dense CNT shells of extremely high quality with almost ideal contacts. Moreover, their electrical properties must be preserved at every process step in the integration of CNT into vertical interconnect structures. In this work this latter aspect is analyzed by studying the changes in the electrical characteristics when encapsulating CNT into different oxides. Oxide encapsulation is often exploited to hold the CNT in place and to avoid snapping during a polishing step. On the other hand, oxide encapsulation can influence the properties of the grown CNT which are directly exposed to possibly harmful oxidative conditions. Two different deposition techniques and oxides were evaluated: Chemical Vapor Deposition (CVD) of SiO2 (reference) and Atomic Layer Deposition (ALD) of Al2O3 in less aggressive oxidizing conditions. The two processes were transferred to CNT interconnect test structures on 200mm wafers and electrically benchmarked. The CNT resistance was measured in function of the CNT length which allows the extraction and individual distinction of the resistive contributions of the CNT and the contacts. It is shown that the encapsulating SiO2 deposited by CVD degrades the resistance of CNT by altering their quality. Directions for future improvements have been identified and discussed.

Copyright
References
Hide All
[1]Purewal M. S., Hong B. H., Ravi A., Chandra B., Hone J., and Kim P., Scaling of Resistance and Electron Mean Free Path of Single-Walled Carbon Nanotubes, Phys. Rev. Lett. Vol. 98, (2007) pp. 186808
[2]Wei B. Q., Vajtai R., and Ajayan P. M., Reliability and current carrying capacity of carbon nanotubes, Appl. Phys. Lett. Vol. 79 No. 8 (2001) pp. 1172
[3]Kim P., Shi L., Majumdar A., and McEuen P. L., Thermal Transport Measurements of Individual Multiwalled Nanotubes, Phys. Rev. Lett. Vol. 87 No. 21, (2001) pp. 215502
[4]Chiodarelli N., Kellens K., Cott D. J., Peys N., Arstila K., Heyns M., De Gendt S., Groeseneken G., and Vereecken P. M., Integration of Vertical Carbon Nanotube Bundles for Interconnects, Journal of The Electrochemical Society, Vol. 157 No. 10, (2010) pp. K211
[5]Chiodarelli N., Li Y., Cott D. J., Mertens S., Peys N., Heyns M., De Gendt S., Groeseneken G., Vereecken P. M., Integration and electrical characterization of carbon nanotube via interconnects, Microelectronic Engineering, Vol. 8 No. 5 (2011) pp. 837
[6]Chiodarelli N., Masahito S., Kashiwagi Y., Li Y., Arstila K., Richard O., Cott D. J., Heyns M., De Gendt S., Groeseneken G. and Vereecken P. M., Measuring the Electrical Resistivity and Contact Resistance of Vertical Carbon Nanotube Bundles for Application as Interconnects, Nanotechnology, Vol. 22 No. 8 (2011) pp. 085302
[7]Farmer Damon B. and Gordon Roy G., Atomic Layer Deposition on suspended Single-Walled Carbon Nanotubes via Gas-Phase Noncovalent Functionalization, Nanoletters Vol. 6, No. 4 (2006) pp. 699703
[8]Lee J.S., Min B., Cho K., Kim S., Park J., Lee Y.T., Kim N.S., Lee M.S., Park S.O., Moon J.T., Al 2O 3nanotubes and nanorods fabricated by coating and filling of carbon nanotubes with atomic-layer deposition, Journal of Crystal Growth Vol. 254 (2003) pp. 443
[9]Poncharal P., Berger C., Ti Y., Wang Z. L., and de Heer W. A., Room Temperature Ballistic Conduction in Carbon Nanotubes, J. Phys. Chem. B Vol. 106 (2002), pp. 12104
[10]Hafner J. H., Bronikowski M. J., Azamian B. R., Nikolaev P., Rinzler A. G., Colbert D. T., Smith K. A., Smalley R. E., Catalytic growth of single-wall carbon nanotubes from metal particles, Chem. Phys. Lett. Vol. 296 (1998) pp. 195
[11]Kong J., Soh H. T., Cassell A. M., Quate C. F. and Dai H., Synthesis of individual single walled carbon nanotubes on patterned silicon wafers, Nature Vol. 395 (1998) pp. 878
[12]Lee B., Park S.-Y., Kim H.-C., Cho K. J., Vogel E. M., Kim M. J., Wallace R. M., and Kim J., conformal Al2O3 dielectric layer deposited by atomic layer deposition for graphene-based nanoelectronics, Appl. Phys. Lett. 92 (2008) pp. 203102
[13]Mawhinney D. B., Naumenko V., Kuznetsova A., Yates J. T., Liu J. and Smalley R. E., Infrared Spectral Evidence for the Etching of Carbon Nanotubes: Ozone Oxidation at 298 K, J. Am. Chem. Soc. Vol. 122 (2000) pp. 2383
[14]Leconte N., Moser J., Ordejon P., Tao H., Lherbier A., Bachtold A., Alsina F., Torres C. M. S., Charlier J., and Roche S., Damaging Graphene with Ozone Treatment: A Chemically Tunable Metal_Insulator Transition, ACS Nano, Vol. 4 No. 7 (2010) pp. 4033
[15]Moser J., Tao H., Roche S., Alsina F., Torres C. M. S., and Bachtold A., Magneto-transport in Disordered Graphene: from Weak Localization to Strong Localization, Cond. Matt. arXiv:1003.1299v1
Recommend this journal

Email your librarian or administrator to recommend adding this journal to your organisation's collection.

MRS Online Proceedings Library (OPL)
  • ISSN: -
  • EISSN: 1946-4274
  • URL: /core/journals/mrs-online-proceedings-library-archive
Please enter your name
Please enter a valid email address
Who would you like to send this to? *
×

Keywords:

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 2 *
Loading metrics...

Abstract views

Total abstract views: 86 *
Loading metrics...

* Views captured on Cambridge Core between September 2016 - 19th October 2017. This data will be updated every 24 hours.