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AlxGa1-xN-Based Materials and Heterostructures

Published online by Cambridge University Press:  10 February 2011

P. Kung
Affiliation:
Center for Quantum Devices, Department of Electrical and Computer Engineenng, Northwestern University, Evanston, IL 60208.
A. Saxler
Affiliation:
Center for Quantum Devices, Department of Electrical and Computer Engineenng, Northwestern University, Evanston, IL 60208. Permanent address: Wright Laboratory, Materials Directorate, Wright Patterson AFB, OH 45433–7707
D. Walker
Affiliation:
Center for Quantum Devices, Department of Electrical and Computer Engineenng, Northwestern University, Evanston, IL 60208.
X. Zhang
Affiliation:
Center for Quantum Devices, Department of Electrical and Computer Engineenng, Northwestern University, Evanston, IL 60208.
R. Lavado
Affiliation:
Center for Quantum Devices, Department of Electrical and Computer Engineenng, Northwestern University, Evanston, IL 60208.
K.S. Kim
Affiliation:
Center for Quantum Devices, Department of Electrical and Computer Engineenng, Northwestern University, Evanston, IL 60208. Permanent address: Department of Physics, Jeon Buk National University, Korea
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Abstract

We present the metalorganic chemical vapor deposition growth, n-type and p-type doping and characterization of AlxGa1-xN alloys on sapphire substrates. We report the fabrication of Bragg reflectors and the demonstration of two dimensional electron gas structures using AlxGa1-xN high quality films. We report the structural characterization of the AlxGa1-xN / GaN multilayer structures and superlattices through X-ray diffraction and transmission electron microscopy. A density of screw and mixed threading dislocations as low as 107 cm-2 was estimated in AlxGa1-xN / GaN structures. The realization of AlxGa1-xN based UV photodetectors with tailored cut-off wavelengths from 365 to 200 nm are presented.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

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