Hostname: page-component-6b989bf9dc-cvxtj Total loading time: 0 Render date: 2024-04-14T19:58:31.109Z Has data issue: false hasContentIssue false
  • English
  • Français

Amorphous Semiconductor Multilayer Structures: Interface and Layer Thickness Effects in Photoluminescence

Published online by Cambridge University Press:  28 February 2011

T. Tiedje
T. Tiedje*
Affiliation:
Corporate Research Laboratory Exxon Research and Engineering Co. Annandale, N.J. 08801
Get access

Abstract

A number of new developments have occurred recently in research on the synthesis and properties of amorphous semiconductor multilayer structures (“amorphous superlattices”) since the discovery of this class of materials in 1983.1 This and more recentwork have shown that tetrahedrally bonded amorphous semiconductors can be fabricated in the form of multilayer structures, with highly uniform layers and atomically abrupt interfaces. The remarkably high degree of structural perfection in these materials on the length scale of the superlattice period (> 5A) has been demonstrated by transmission electron microscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 49: Symposium F – Materials Issues in Applications of Amorphous Silicon Technology , 1985 , 121
Copyright
Copyright © Materials Research Society 1985

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Abeles, B., Tiedje, T., Phys. Rev. Lett. 51, 2003 (1983).CrossRefGoogle Scholar
2. Deckman, H. W., Dunsmuir, J. H., Abeles-, B., Appl. Phys. Lett. 46, 171 (1985).CrossRefGoogle Scholar
3. Cheng, R., Wen, S., Feng, J., M. Fritzsche Appl. Phys. Lett. 46, 592 (1985).CrossRefGoogle Scholar
4. Tiedje, T., Abeles, B., Persans, P. D., Brooks, B. G., Cody, G. D., J. Non-Cryst. Solids 66, 345 (1984).CrossRefGoogle Scholar
5. Abeles, B., Tiedje, T., Liang, K., Deckman, H. W., Stasiewski, H. E., Scanlon, J. C., Eisenberger, P. M., J. Non Cryst. Solids 66, 351 (1984).CrossRefGoogle Scholar
6. Hirose, M., Miyazaki, S., J. Non Cryst. Solids 66, 327 (1984).CrossRefGoogle Scholar
7. Kakalios, J., Fritzsche, H., Phys. Rev. Lett. 53, 1602 (1984).CrossRefGoogle Scholar
8. Hundhausen, M., Ley, L., Carius, R., Phys. Rev. Lett. 53, 1598 (1984).CrossRefGoogle Scholar
9. Munekata, H., H. Kukimoto Jpn. J. Appl. Phys. 22, L544 (1983).CrossRefGoogle Scholar
10. Tiedje, T., Abeles, B., Appl. Phys. Lett. 45, 17 (1984).CrossRefGoogle Scholar
11. Roxlo, C. B., Abeles, B., Tiedje, T., Phys. Rev. Lett. 52, 1994 (1984).CrossRefGoogle Scholar
12. Tiedje, T., Abeles, B., B. G. Brooks (to be published).Google Scholar
13. Tiedje, T., Abeles, B., Brooks, B. G., AIP Conf. Proc. 120, 417 (1984)CrossRefGoogle Scholar
14. Street, R. A., Semiconductors and Semimetals vol. 21B ed. Pankove, J., p. 197 (1984).CrossRefGoogle Scholar