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Amorphous Semiconductor Multilayer Structures: Interface and Layer Thickness Effects in Photoluminescence

Published online by Cambridge University Press:  28 February 2011

T. Tiedje
T. Tiedje*
Affiliation:
Corporate Research Laboratory Exxon Research and Engineering Co. Annandale, N.J. 08801
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Abstract

A number of new developments have occurred recently in research on the synthesis and properties of amorphous semiconductor multilayer structures (“amorphous superlattices”) since the discovery of this class of materials in 1983.1 This and more recentwork have shown that tetrahedrally bonded amorphous semiconductors can be fabricated in the form of multilayer structures, with highly uniform layers and atomically abrupt interfaces. The remarkably high degree of structural perfection in these materials on the length scale of the superlattice period (> 5A) has been demonstrated by transmission electron microscopy.

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