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Amorphous Si:H Heterojunction Photodiode and its Application to a Compact Scanner

Published online by Cambridge University Press:  28 February 2011

S. Kaneko ,
Y. Kajiwara ,
F. Okumura  and
T. Ohkubo
S. Kaneko
Affiliation:
Microelectronics Research Labs., NEC Corporation 4-1-1 Miyazaki Miyamae-ku Kawasaki, 213 Japan
Y. Kajiwara
Affiliation:
Microelectronics Research Labs., NEC Corporation 4-1-1 Miyazaki Miyamae-ku Kawasaki, 213 Japan
F. Okumura
Affiliation:
Microelectronics Research Labs., NEC Corporation 4-1-1 Miyazaki Miyamae-ku Kawasaki, 213 Japan
T. Ohkubo
Affiliation:
Microelectronics Research Labs., NEC Corporation 4-1-1 Miyazaki Miyamae-ku Kawasaki, 213 Japan
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Abstract

This paper reports heterojunction photodiode properties and its application to a compact scanner. The photodiode has ITO / p-a-SiC:H / a-Si:H / metal structure. This diode has high photo to dark current ratio and small photocurrent saturation voltage, because of the excellent blocking characteristics for a heterojunction with large built in potential. Moreover, a-Si:H / metal contact has been investigated. A contact linear image sensor has been fabricated using the heterojunction photodiode array and compact optical system. Performance tests showed excellent results. Good reproduced images have been obtained.

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References

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