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Amorphous Silicon Based TFT and MIS Nonvolatile Memories

Published online by Cambridge University Press:  01 February 2011

Yue Kuo  and
Helinda Nominanda
Yue Kuo
Affiliation:
yuekuo@tamu.edu, Texas A&M University, 235 J. E. Brwon Engineering Bldg., MS 3122, TAMU, College Station, TX, 77843-3122, United States, 979-845-9807, 979-458-8836
Helinda Nominanda
Affiliation:
helinda@tamu.edu, Texas A&M University, 235 J. E. Brown Engineering Bldg., MS 3122, College Station, TX, 77843-3122, United States
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Abstract

The amorphous silicon (a-Si:H) TFT and MIS capacitor, which include an a-Si:H layer embedded in the silicon nitride gate dielectric layer, have been prepared and characterized for memory functions. Large shifts of the threshold voltage and flat band voltage were detected in the current-voltage and capacitance-voltage hysteresis measurements. The embedded a-Si:H film functioned as a charge retention medium that stores and releases injected carriers. The devices memory capacity varied with the thickness of the embedded a-Si:H layer and the sweep voltage. These low-cost memory devices can be used in many low-temperature prepared circuits.

Keywords

amorphousSithin film

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