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An Atomic Force Microscopy Study of the Initial Nucleation of GaN on Sapphire

Published online by Cambridge University Press:  21 February 2011

M. Richards-Babb ,
S. L. Buczkowski ,
Zhonghai Yu  and
T. H. Myers
M. Richards-Babb
Affiliation:
Chemistry Department
S. L. Buczkowski
Affiliation:
Physics Department, West Virginia University, Morgantown, WV 26506, thmyers@wvnvms.wvnet.edu
Zhonghai Yu
Affiliation:
Physics Department, West Virginia University, Morgantown, WV 26506, thmyers@wvnvms.wvnet.edu
T. H. Myers
Affiliation:
Physics Department, West Virginia University, Morgantown, WV 26506, thmyers@wvnvms.wvnet.edu
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Abstract

Preliminary results of a study of GaN nucleation and growth by molecular beam epitaxy using a nitrogen rf plasma source are presented. Nucleation layers and 3000 Å thick layers were investigated by atomic force microscopy and x-ray diffraction. Growth under gallium-rich conditions both increased nucleation island size and promoted two-dimensional growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 237
Copyright
Copyright © Materials Research Society 1996

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References

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