No CrossRef data available.
Published online by Cambridge University Press: 28 February 2011
Experimental and theoretical studies demonstrate that it is possible to redefine the basic character of band-edge electronic wavefunctions in superlattices, the period of which is comparable to the lattice parameter of the constituent materials. In using superlattice periodicity to redefine electronic wavefunctions, strain and crystalline orientation can be used to select which wavefunctions will form the band edge states. These principles can be used to form a direct bandgap semiconductor superlattice from Si and Ge, two indirect bandgap materials.