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An X-Ray Study of Domain Structure and Stress in Pd2Si Films at Pd-Si Interfaces

Published online by Cambridge University Press:  15 February 2011

Haydn Chen ,
G. E. White ,
S. R. Stock  and
P. S. Ho
Haydn Chen
Affiliation:
Department of Metallurgy and Mining Engineering, The Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801 (U.S.A.)
G. E. White
Affiliation:
Department of Metallurgy and Mining Engineering, The Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801 (U.S.A.)
S. R. Stock
Affiliation:
Department of Metallurgy and Mining Engineering, The Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801 (U.S.A.)
P. S. Ho
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, NY 10598 (U.S.A.)
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Extract

The domain structures of palladium and Pd2Si as well as their crystallographic relationship to the silicon substrates were determined on Si(111) and Si(100) samples by mapping X-ray diffraction pole figures. X-ray diffraction topography and rocking curve measurements were carried out for the silicon substrates in order to detect the presence of elastic and/or plastic deformation in the substrates caused by silicide formation. The stresses in the silicide films were determined from the bending of the silicon substrates using X-ray diffraction techniques.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 10: Symposium C – Thin Films and Interfaces I , 1981 , 165
Copyright
Copyright © Materials Research Society 1982

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References

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