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Analysis of High Dose Implanted Silicon by High Depth ResolutionRbs and Spectroscopic Ellipsometry and TEM

Published online by Cambridge University Press:  25 February 2011

T. Lohner ,
G. Mezey ,
M. Fried ,
L. GhiţA ,
C. Ghiţa ,
A. Mertens ,
H. Kerkow ,
E. Kctai ,
F. PÁSzti  and
F. BÁNyai
...Show all authors
T. Lohner
Affiliation:
Central Research Institute for Physics, Budapest, P.O.B. 49, Hungary
G. Mezey
Affiliation:
Central Research Institute for Physics, Budapest, P.O.B. 49, Hungary
M. Fried
Affiliation:
Central Research Institute for Physics, Budapest, P.O.B. 49, Hungary
L. GhiţA
Affiliation:
Central Institute for Physics, Bucharest, MG 7, Roumania
C. Ghiţa
Affiliation:
Central Institute for Physics, Bucharest, MG 7, Roumania
A. Mertens
Affiliation:
Humboldt University, 1040 Berlin, Invalidenstr. 42, GDR
H. Kerkow
Affiliation:
Humboldt University, 1040 Berlin, Invalidenstr. 42, GDR
E. Kctai
Affiliation:
Central Research Institute for Physics, Budapest, P.O.B. 49, Hungary
F. PÁSzti
Affiliation:
Central Research Institute for Physics, Budapest, P.O.B. 49, Hungary
F. BÁNyai
Affiliation:
Central Research Institute for Physics, Budapest, P.O.B. 49, Hungary
GY. VÍZkelethy
Affiliation:
Central Research Institute for Physics, Budapest, P.O.B. 49, Hungary
E. JÁRoli
Affiliation:
Central Research Institute for Physics, Budapest, P.O.B. 49, Hungary
J. Gyulai
Affiliation:
Central Research Institute for Physics, Budapest, P.O.B. 49, Hungary
M. Somogyi
Affiliation:
Institute for Technical Physics, Budapest, P.O.B. 76, Hungary
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Abstract

One of the applications of high dose ion implantation is to form surfacealloys or compound layers. The detailed characterization of such compositestructures is of great importance. This paper tries to answer the question:how can we outline, at least, a qualitative picture from the opticalproperties measured by ellipsometry of high dose Al and Sb implantedsilicon. Attempts are done to separate the effect of implanted impuritiesfrom the dominant disorder contribution to the measured optical properties.As the ellipsometry does not provide information enough to decide theapplicability of optical models therefore methods sensitive to the structure(channeling and TEM) were applied too.

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References

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