Hostname: page-component-76fb5796d-45l2p Total loading time: 0 Render date: 2024-04-29T07:32:40.168Z Has data issue: false hasContentIssue false
  • English
  • Français

Analysis of the Si-ON-Insulator Structure by Modeling of the Interface Atomic Arrangement

Published online by Cambridge University Press:  22 February 2011

T. Saito ,
Y. Yamakoshi  and
I. Ohdomari
T. Saito
Affiliation:
School of Science and Engineering, Waseda University, 3–4–1, Ohkubo, Shinjuku-ku, Tokyo 160, JAPAN.
Y. Yamakoshi
Affiliation:
School of Science and Engineering, Waseda University, 3–4–1, Ohkubo, Shinjuku-ku, Tokyo 160, JAPAN.
I. Ohdomari
Affiliation:
School of Science and Engineering, Waseda University, 3–4–1, Ohkubo, Shinjuku-ku, Tokyo 160, JAPAN.
Get access

Abstract

A structure of interface between crystalline Si (c-Si) and underlying SiO2 film formed by Si-on-Insulator technique has been analyzed by modeling of interface atomic arrangement. A ball-and-spoke model of a stoichiometrically abrupt c-Si/SiO2 interface has been constructed by connecting a (100) c-Si lattice and a continuous random network model of amorphous SiO2 . A Keating-type potential has been used for the interatomic interactions. The bond bending distortion energy of both Si and O atoms increases at the interface, while the bond stretching energy is negligibly small. The amount of interface energy due to bond distortion is 0.20J/m2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 531
Copyright
Copyright © Materials Research Society 1984

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Leamy, H. J., “Laser and Electron-Beam Interactions with Solids” edited by Appleton, B. R. and Celler, G. K. (North Holland, 1982) p. 459.Google Scholar
2. Kunii, Y., Tabe, M. and Kajiyama, K., J. Appl. Phys. 54, 2847 (1983).CrossRefGoogle Scholar
3. Saito, T. and Ohdomari, I., Phil. Mag. B 43, 673 (1981).CrossRefGoogle Scholar
4. Saito, T. and Ohdomari, I., in Proc. of U.S.-Japan Seminar on Solid Phase Epitaxy and Interface Kinetics (held at Oiso, Japan, 1983) (to be published)Google Scholar
5. Bell, R. J. and Dean, P., Phil. Mag. 25, 1381 (1972).CrossRefGoogle Scholar
6. Gaskell, P. H. and Tarrant, I. D., Phil. Mag. B 42, 265 (1980).CrossRefGoogle Scholar
7. Keating, P. N., Phys. Rev. 145, 637 (1966).CrossRefGoogle Scholar
8. Steinhardt, P., Alben, R. and Weaire, D., J. Non-Crystalline Solids 15, 199 (1974).CrossRefGoogle Scholar
9. Pantelides, S. T. and Long, M., “The Physics of SiO2 and its Interfaces” edited by Pantelides, S. T. (Pergamon, 1978) p. 339.CrossRefGoogle Scholar
10. Ching, W. Y., Phys. Rev. B 26, 6610 (1982).CrossRefGoogle Scholar