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Anisotropic Ion Beam Assisted Etching of Optical Structures in GaAs and InP

Published online by Cambridge University Press:  21 February 2011

A. Scherer ,
B. P. Van Der Gaag ,
K. Kash ,
H. G. Craighead  and
P. Grabbe
A. Scherer
Affiliation:
Bellcore, 331 Newman Springs Rd, Red Bank, NJ 07701
B. P. Van Der Gaag
Affiliation:
Bellcore, 331 Newman Springs Rd, Red Bank, NJ 07701
K. Kash
Affiliation:
Bellcore, 331 Newman Springs Rd, Red Bank, NJ 07701
H. G. Craighead
Affiliation:
Bellcore, 331 Newman Springs Rd, Red Bank, NJ 07701
P. Grabbe
Affiliation:
Bellcore, 331 Newman Springs Rd, Red Bank, NJ 07701
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Abstract

Ion beam assisted etching (IBAE) was used to define submicron structures into GaAs/AlGaAs and InP/InGaAsP heterostructures. Etch rates in excess of I pm/minute were obtained after optimization of the etching process, allowing the fabrication of optoelectronic structures which require smooth, vertical sidewalls and depths of several microns. By altering the gas flow and the ion beam parameters, the same technique was used to pattern electron beam-written structures with lateral dimensions of less than 30 nm and aspect ratios in excess of 5:1 in GaAs.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 126: Symposium P – Advanced Surface Processes for Optoelectronics , 1988 , 245
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

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