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Annealing Behaviour of WSix Films Prepared By CVD

Published online by Cambridge University Press:  21 March 2011

M. Katiyar ,
G. S. Samal ,
R. K. Gupta Deepak ,
P. K. Sahoo ,
V. N. Kulkarni  and
O. Adetutu
M. Katiyar
Affiliation:
Department of Materials and Metallurgical Engineeringmk@iitk.ac.in
G. S. Samal
Affiliation:
Department of Materials and Metallurgical Engineering, IIT Kanpur
R. K. Gupta Deepak
Affiliation:
Department of Materials and Metallurgical Engineering, IIT Kanpur
P. K. Sahoo
Affiliation:
Department of Physics, IIT Kanpur
V. N. Kulkarni
Affiliation:
Department of Physics, IIT Kanpur
O. Adetutu
Affiliation:
Motorola Inc., Austin
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Abstract

Tungsten silicide (WSix) films, deposited by chemical vapour deposition are normally amorphous in nature, and need to be annealed at high temperature to obtain low resistivity required for interconnections and metallization layers in VLSI circuits. In this paper, we focus on this annealing process for films deposited on Si and SiO2 substrate, and having Si/W ratio of 2.4. The characterization methods used were time-resolved X-ray diffraction, Resistivity measurement, and Rutherford backscattering spectroscopy analysis. We observe that 30 minutes is not sufficient for complete transformation of the WSi2.4 films on Si substrate. We also report on the dependence of annealing behaviour of nonstoichiometric WSixfilm on the substrate type.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 670: Symposium K – Gate Stack and Sillicide Issues in Silicon , 2001 , K5.7
Copyright
Copyright © Materials Research Society 2001

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References

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