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Annealing of Nanocrystalline Silicon Micro-bridges with Electrical Stress

  • Gokhan Bakan (a1), Adam Cywar (a2), Cicek Boztug (a3), Mustafa Bilal Akbulut (a4), Helena Silva (a5) and Ali Gokirmak (a6)...

Nanocrystalline silicon (nc-Si) micro-bridges are melted and crystallized through Joule heating by applying high-amplitude short duration voltage pulses. Full crystallization of nc-Si bridges is achieved by adjusting the voltage-pulse amplitude and duration. If the applied pulse cannot deliver enough energy to the bridges, only surface texture modification is observed. On the contrary, if the pulse is not terminated after the entire bridge melts, molten silicon diffuses on to the contact pads and the bridge tapers in the middle. Melting of the bridges can be monitored through current-time (I-t) and voltage-time (V-t) measurements during the electrical stress. Conductance of the bridges is enhanced after the electrical stress.

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[1] R. H. Reuss , B. R. Chalama , A. Moussessian , M. G. Kane , A. Kumar , D. C. Zhang , J. A. Rogers , M. Hatalis , D. Temple , G. Moddel , B. J. Eliasson , M. J. Estes , J. Kunze , E. S. Handy , E. S. Harmon , D. B. Salzman , J. M. Woodall , M. A. Alam , J. Y. Murthy , S. C. Jacobsen , M. Olivier , D. Markus , P. M. Campbell and E. Snow , “Macroelectronics: Perspectives on technology and applications,” Proc IEEE, vol. 93, pp. 12391256, 2005.

[2] S. Wagner , H. Gleskova , I. C. Cheng and M. Wu , “Silicon for thin-film transistors,” Thin Solid Films, vol. 430, pp. 1519, 2003.

[3] M. C. McAlpine , R. S. Friedman and C. M. Lieber , “High-Performance Nanowire Electronics and Photonics and Nanoscale Patterning on Flexible Plastic Substrates,” Proceedings of the IEEE, Jul, vol. 93, pp. 13571363, 2005.

[4] T. I. Kamins , Polycrystalline Silicon for Integrated Circuits and Displays. Kluwer Academic Publishers, 1998.

[7] M. Raman , T. Kifle , E. Bhattacharya and K. Bhat , “Physical Model for the Resistivity and Temperature Coefficient of Resistivity in Heavily Doped Polysilicon,” Electron Devices, IEEE Transactions on, vol. 53, pp. 18851892, 2006.

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MRS Online Proceedings Library (OPL)
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  • EISSN: 1946-4274
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