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Anomalous Behavior of Semi-Insulating Silicon Rich Amorphous Silicon Nitride

Published online by Cambridge University Press:  22 February 2011

J. B. Bernstein ,
E. F. Gleason ,
A. E. Wetsel ,
E. Z. Liu  and
P. W. Wyatt
J. B. Bernstein
Affiliation:
MIT Lincoln Laboratory, 244 Wood Street, Lexington MA 02173
E. F. Gleason
Affiliation:
MIT Lincoln Laboratory, 244 Wood Street, Lexington MA 02173
A. E. Wetsel
Affiliation:
Harvard University, Gordon McKay Laboratory, Cambridge MA 02138
E. Z. Liu
Affiliation:
Harvard University, Gordon McKay Laboratory, Cambridge MA 02138
P. W. Wyatt
Affiliation:
MIT Lincoln Laboratory, 244 Wood Street, Lexington MA 02173
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Abstract

Silicon rich PECVD amorphous silicon nitride has been used as an inter-level metal dielectric for making laser programmable connections on restructurable VLSI. There is an apparent Schottky barrier characteristic that has a 0.11 eV lower barrier for Ti than for Al. The stoichiometry was analyzed using RBS and HFS, and found to contain approximately 55% Si, 25% N, and 20% H by atomic percentages. The optical bandgap is 2.01 eV as found by the Tauc method.

The insulating behavior depends on time in an anomalous manner at applied fields greater than about 0.2 MV/cm, whereby the current increases with time for several secondsuntil it reaches an equilibrium value. The current decays in a normal charging manner at lower fields and in samples with insulating sub-layers between the electrodes and thenitride. When used as a gate dielectric, there is a long-time charging behavior that shifts the flat band voltage in the opposite direction of the applied stress. This shift is indicative of polarization within the dielectric. This behavior is similar to that of a reverse biased a-Si:H p-i-n diode.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 284: Symposium G – Amorphous Insulating Thin Films , 1992 , 113
Copyright
Copyright © Materials Research Society 1993

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References

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