Hostname: page-component-76fb5796d-45l2p Total loading time: 0 Render date: 2024-04-25T21:19:42.612Z Has data issue: false hasContentIssue false

Application of a Focused Ion Beam System to Nanolithography

Published online by Cambridge University Press:  11 February 2011

Richard M. Langford
Affiliation:
Department of Materials, University of Oxford Parks Road, Oxford, OX1 3PH, UK
Shamus O'Reilly
Affiliation:
Department of Materials, University of Oxford Parks Road, Oxford, OX1 3PH, UK
Iain J. McEwen
Affiliation:
Chemistry Department, Heriot-Watt University, Edinburgh, EH14 4AS, UK
Get access

Abstract

Nano-imprint lithography (NIL) and micro-contact printing (MCP) are currently receiving considerable attention as techniques that can be used for low cost nanolithography. Here the application of a focused ion beam (FIB) system for the analysis of the elastomer stamps and imprinted patterns which are used in these nanolithography techniques is discussed. It is shown that the ‘lift-out’ technique can be used to prepare cross-sections of both the elastomer poly(dimethylsiloxane) (PDMS) stamps and the imprinted poly(methylmethacrylate) (PMMA) patterns. In addition, the use of the FIB system to prepare masters such as gratings and structures with curved shapes that would be difficult to fabricate using conventional processing techniques is discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Biebuyck, H. A., Larson, N. B., Delamarche, E. and Micheal, B., IBM J. Res. Dev. 42, 159 (1997).Google Scholar
2. Chou, S. Y., Krauss, P. R., Zhang, W., Guo, L. and Zhang, L., J. Vac. Sci. Technol. B 15, 2897 (1997).Google Scholar
3. Giannuzzi, L. A., Drown, J. L., Brown, S. R., Irwin, R. B. and Stevie, F. A. in Specimen Preparation for Transmission Electron Microscopy of Materials IV, edited by Anderson, R.M. and Walck, S.D., (Mat. Res. Soc. Proc. 480, 1997) pp. 19.Google Scholar
4. Pan, G., Takahashi, S., Walker, J. F., Mapps, D. J., Yamakawa, K., Honda, N. and Ouchi, K., J. Magn. and Magn. Mater. 202, 583 (1999).Google Scholar
5. Orth, A., Reithmaier, J. P, Muller, J., Kieslich, A., Forchel, A., Weber, J., Gyuro, I. and Zielinski, E., Microelectron. Eng., 27, 347 (1995).Google Scholar
6. Vasilie, M. J., Nassar, R. and Xie, J. J., Vac. Sci. Technol. B 16, 2499 (1998).Google Scholar
7. Langford, R. M. and Petford-Long, A. K., J. Vac. Sci. Technol. A 19, 2186 (2001).Google Scholar
8. Langford, R. M., Inkson, B. J., Moebus, G. and Titchmarsh, J. M., Inst. Phys. Conf. Ser. 168, 135 (2000).Google Scholar