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Application of SC-Simul for Numerical Modeling of the Opto-Electronic Properties of Heterojunction Diodes

Published online by Cambridge University Press:  01 February 2011

R. Brüggemann ,
M. Rösch ,
S. Tardon  and
G.H. Bauer
R. Brüggemann
Affiliation:
Institut für Physik, Carl von Ossietzky Universität Oldenburg, 26111 Oldenburg, GermanyEmail: rudi.brueggemann@uni-oldenburg.de
M. Rösch
Affiliation:
Institut für Physik, Carl von Ossietzky Universität Oldenburg, 26111 Oldenburg, GermanyEmail: rudi.brueggemann@uni-oldenburg.de
S. Tardon
Affiliation:
Institut für Physik, Carl von Ossietzky Universität Oldenburg, 26111 Oldenburg, GermanyEmail: rudi.brueggemann@uni-oldenburg.de
G.H. Bauer
Affiliation:
Institut für Physik, Carl von Ossietzky Universität Oldenburg, 26111 Oldenburg, GermanyEmail: rudi.brueggemann@uni-oldenburg.de
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Abstract

We apply the publicly available device modeling tool SC-Simul for simulating experiments with user-defined heterojunction diodes to discuss the role of the electric field in solar cells. For amorphous silicon/crystalline silicon heterodiodes, the role of interface defects, an amorphous silicon buffer layer and low-cost crystalline silicon is studied by simulation of current-voltage characteristics and photoluminescence. Photoluminescence is sensitive to the minority carrier density in the volume of the device and can be used to monitor minority carrier properties in these diodes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 862: Symposium A – Amorphous and Nanocrystalline Silicon Science and Technology–2005 , 2005 , A9.3
Copyright
Copyright © Materials Research Society 2005

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