Hostname: page-component-cb9f654ff-mx8w7 Total loading time: 0 Render date: 2025-09-07T02:33:40.824Z Has data issue: false hasContentIssue false
  • English
  • Français

Application of SiO2 Films deposited by TICS/O2 PECVD to InSb MISFET

Published online by Cambridge University Press:  10 February 2011

O. Sugiura ,
T. Akiba  and
I. Idris
O. Sugiura
Affiliation:
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan, osugiura@pe.titech.ac.jp
T. Akiba
Affiliation:
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan, osugiura@pe.titech.ac.jp
I. Idris
Affiliation:
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan, osugiura@pe.titech.ac.jp
Get access

Abstract

We have fabricated n-channel InSb MISFETs using SiO2 films as gate insulators. The insulator was deposited by PECVD using tetra-isocyanate-silane (TICS) and oxygen (O2) as source gases. Threshold voltage and carrier mobility at 77K were 0.5V and 4200cm2/Vs, respectively.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1) Forbes, G. S. and Anderson, H. H.: J.Am.Chem.Soc., 62 (1940) 761.Google Scholar
2) Idris, I. and Sugiura, O. Jpn.J.Appl.Phys., 34 (1995) L772.Google Scholar
3) dris, I. and Sugiura, O. Jpn.J.Appl.Phys., 37 (1998) 6562.Google Scholar