Hostname: page-component-8448b6f56d-dnltx Total loading time: 0 Render date: 2024-04-25T04:26:36.419Z Has data issue: false hasContentIssue false

Application of Tem on Sub-Half Micron Semiconductor Devices

Published online by Cambridge University Press:  10 February 2011

Hong Zhang*
Affiliation:
PVD Technology, Applied Materials, 4250 Burton Dr. Santa Clara, CA 95054
Get access

Abstract

Application of transmission electron microscopy on sub-half micron devices has been illustrated in terms of process evaluation and failure analysis. For process evaluation, it is emphasized that a large number of features need to be examined in order to have reliable conclusions about the processes, while for failure analysis, the goal is to pin-point a single process step causing failure or a single source introducing the particle defect.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Marcus, R. B. and Sheng, T. T., “Transmission Electron Microscopy of Silicon VLSI Circuits and Structure”, John Wiley and Sons, Inc., New York (1983).Google Scholar
[2] Edington, J. W., “Practical Electron Microscopy in Materials Science”, TechBooks, Herdon, VA (1976).Google Scholar
[3] Bravman, J. C. and Sinclair, R., J. Electron Microscopy Technique, 1 (1984) 5361.10.1002/jemt.1060010106Google Scholar
[4] Morris, S. et al., Proceedings of ISTFA, 1991 Google Scholar
[5] Benedict, J. P., Klepeis, S. J., Vandygrift, W. G. and Anderson, R. M., EMSA Bulletin, Fall (1989).Google Scholar