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Applications of In Situ Ellipsometry in RTP Temperature Measurement and Process Control

Published online by Cambridge University Press:  28 February 2011

Hisham Z. Massoud ,
Ronald K. Sampson ,
Kevin A. Conrad ,
Yao-Zhi Hu  and
Eugene A. Irene
Hisham Z. Massoud
Affiliation:
Department of Electrical Engineering, Duke University, Durham, NC 27706
Ronald K. Sampson
Affiliation:
Department of Electrical Engineering, Duke University, Durham, NC 27706
Kevin A. Conrad
Affiliation:
Department of Electrical Engineering, Duke University, Durham, NC 27706 Department of Chemistry, University of North Carolina, Chapel Hill, NC 27514
Yao-Zhi Hu
Affiliation:
Department of Chemistry, University of North Carolina, Chapel Hill, NC 27514
Eugene A. Irene
Affiliation:
Department of Chemistry, University of North Carolina, Chapel Hill, NC 27514
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Abstract

The applications of in situ automated ellipsometry in the measurement and control of temperature in rapid-thermal processing (RTP) equipment are investigated. This technique relies on the accurate measurement of the index of refraction of a wafer using ellipsometry and the strong temperature dependence of the index of refraction to determine the wafer temperature. In principle, this technique is not limited to silicon wafer processing and could be applied to any surface whose index of refraction has a strong and well known temperature dependence. This technique is non-invasive, non-contact, fast, accurate, compatible with ultraclean processing, and lends itself to monitoring the dynamic heating and cooling cycles encountered in rapid-thermal processing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 224: Symposium F – Rapid Thermal and Integrated Processing I , 1991 , 17
Copyright
Copyright © Materials Research Society 1991

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References

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