Hostname: page-component-cb9f654ff-fg9bn Total loading time: 0 Render date: 2025-08-04T12:51:09.755Z Has data issue: false hasContentIssue false
  • English
  • Français

Ar Cluster Ion Bombardment Effects on SemiconductorSurfaces

Published online by Cambridge University Press:  17 March 2011

Toshio Seki ,
Kazumichi Tsumura ,
Takaaki Aoki ,
Jiro Matsuo ,
Gikan H. Takaoka  and
Isao Yamada
Toshio Seki
Affiliation:
Ion Beam Engineering Experimental Laboratory, Kyoto University, Kyoto 606-8501, JAPAN Collaborative Research Center for Cluster Ion Beam Process Technology
Kazumichi Tsumura
Affiliation:
Ion Beam Engineering Experimental Laboratory, Kyoto University, Kyoto 606-8501, JAPAN
Takaaki Aoki
Affiliation:
Ion Beam Engineering Experimental Laboratory, Kyoto University, Kyoto 606-8501, JAPAN Collaborative Research Center for Cluster Ion Beam Process Technology
Jiro Matsuo
Affiliation:
Ion Beam Engineering Experimental Laboratory, Kyoto University, Kyoto 606-8501, JAPAN
Gikan H. Takaoka
Affiliation:
Ion Beam Engineering Experimental Laboratory, Kyoto University, Kyoto 606-8501, JAPAN
Isao Yamada
Affiliation:
Laboratory of Advanced Science and Technology for Industry, Himeji Institute of Technology, Ako, Hyogo, 678-1205, JAPAN
Get access

Abstract

New surface modification processes have been demonstrated using gas clusterion irradiations because of their unique interaction between cluster ionsand surface atoms. For example, high quality ITO films could be obtained by O2 cluster ion assisted deposition at room temperature. It isnecessary to understand the role of cluster ion bombardment during filmformation for the further developments of this technology. VariableTemperature Scanning Tunneling Microscope (VT-STM) in Ultra High Vacuum(UHV) allows us to study ion bombardment effects on surfaces and nucleationgrowth at various temperatures.

The irradiation effects between Ar cluster ion and Xe monomer ion werecompared. When a Si(111) surface with Ge deposited to a few Å was annealedto 400°C, it was observed that many islands of Ge were formed. The surfacewith the Ge islands was irradiated by these ions. In the STM image ofcluster-irradiated surface, large craters with diameter of about 100 Å wereobserved, while only small traces with diameter of about 20 Å were observedin monomer-irradiated surface. The number of Ge atoms displaced by one Arcluster ion impact was much larger than that by one Xe ion impact. Thisresult indicates that Ar cluster ion impacts can enhance the physicalmodification of Ge islands. When the sample irradiated with Ar cluster wasannealed at 600°C, the hole remained, but the outer rim of the craterdisappeared and the surface structure was reconstructed at the site of therim. The depth of damage region in the target became shallower with decreaseof the impact energy. These results indicate that low damage and usefulsurface modification can be realized using the cluster ion beam.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 647: Symposium O – Ion Beam Synthesis & Processing of Advanced Materials , 2000 , O9.4
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1. Yamada, I., Matsuo, J., Insepov, Z. and Akizuki, M., Nucl. Instr. and Meth. B106, 165 (1995).Google Scholar
2. Yamada, I., Brown, W.L., Northby, JA and Sosnowski, M., Nucl. Instr. and Meth. B79, 223 (1993).Google Scholar
3. Takaoka, G.H., Sugawara, G., Hummel, R.E., Northby, JA, Sosnowski, M. andYamada, I., Mat. Res. Soc. Symp. Proc. 316, 1005 (1994).Google Scholar
4. Insepov, Z., Sosnowski, M. and Yamada, I., Advanced Materials '93 IV/Laser and Ion Beam Modification of Materials, ed.Yamada, I.et al, Trans. Mat. Res. Soc. Jpn. 17, 1110 (1994).Google Scholar
5. Qin, W., Howson, R.P., Akizuki, M., Matsuo, J., Takaoka, G. and Yamada, I., Mater. Chem. Phys. 54, no.1-3, 258 (1998).Google Scholar
6. Toyoda, N., Hagiwara, N., Matsuo, J. and Yamada, I., Nucl. Instr. and Meth. B148, 639 (1999).Google Scholar
7. Nishiyama, A., Adachi, M., Toyoda, N., Hagiwara, N., Matsuo, J. and Yamada, I., AIP conference proceedings (Fifteenth International Conference on Application of Accelerators in Research and Industry) 475, 421 (1998).Google Scholar
8. Shimada, N., Aoki, T., Matsuo, J., Yamada, I., Goto, K. and Sugui, T., J. Mat. Chem. and Phys. 54, 80 (1998).Google Scholar
9. Akizuki, M., Matsuo, J., Qin, W., Aoki, T., Harada, M., Ogasawara, S., Yodoshi, K. and Yamada, I., Mater. Chem. Phys. 54, no.1-3, 255 (1998).Google Scholar
10. Motta, N., Sgarlata, A., Calarco, R., Nguyen, Q., Castro, J. Cal, Patella, F., Balzarotti, A. and Crescenzi, M. De, Surf, Sci. 406, 254 (1998).Google Scholar
11. Motta, N., Sgarlata, A., Crescenzi, M. De and Derrien, J., Appl. Surf. Sci. 102, 57 (1996).Google Scholar
12. Voigtländer, B. and Zinner, A., Appl. Phys. Lett. 63, no.22, 3055 (1993).Google Scholar
13. Seki, T., Matsuo, J. and Yamada, I., Nucl. Instr. and Meth. B161–163, 1007 (2000).Google Scholar