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Arsenic in SiO2 - Phase Segregation, Drift, and Diffusion Phenomena

  • G. K. Celler (a1), L. E. Trimble (a1), T. T. Sheng (a1), K. W. West (a1), S. G. Kosinski (a1) and L. Pfeiffer (a1)...

We have recently determined that anomalously low diffusion of high dose As implants in SiO2 is caused by phase separation. In an inert ambient, As segregates into spherical As-rich droplets of 50 to 500Å in diameter, which are essentially immobile when heated isothermally, even at 1405 °C. In a temperature gradient the droplets move toward the heat source.

The dependence of the segregation rate, drift, and diffusion on-the ambient and arsenic concentration is discussed here, and a new interpretation of the published arsenic diffusion data is provided.

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  • EISSN: 1946-4274
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