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a-SiC:H Doped with Reactive Gases and with Ion Implantation

Published online by Cambridge University Press:  21 February 2011

F. Demichelis ,
C. F. Pirri ,
E. Tresso ,
G. Della Mea ,
V. Rigato ,
P. Rava  and
G. Amato
F. Demichelis
Affiliation:
Dip. Fisica Politecnico - C.so Duca degli Abruzzi 24, 10129 Torino, Italy
C. F. Pirri
Affiliation:
Dip. Fisica Politecnico - C.so Duca degli Abruzzi 24, 10129 Torino, Italy
E. Tresso
Affiliation:
Dip. Fisica Politecnico - C.so Duca degli Abruzzi 24, 10129 Torino, Italy
G. Della Mea
Affiliation:
Laboratori INFN - Via Romea 4, Legnaro e Unita' INFM Padova, Italy
V. Rigato
Affiliation:
Laboratori INFN - Via Romea 4, Legnaro e Unita' INFM Padova, Italy
P. Rava
Affiliation:
Elettrorava - Via Don Sapino 120, Savonera Torino, Italy
G. Amato
Affiliation:
I.E.N.G. Ferraris - Str. delle Cacce 35, Torino, Italy
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Abstract

Boron doped a-SiC:H samples have been obtained both by gas phase doping during film growth and by using ion implantation. All the implanted samples were annealed under vacuum to remove the damage introduced by ion implantation and to produce a dopant diffusion. Physical properties deduced by optical, electrical and structural characterization of the two sets of samples have been compared. Ion implantation technique allows a better control of the dopant dose but increases the compositional disorder and the obtained conductivity values are one order of magnitude lower than those of gas doped samples.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 793
Copyright
Copyright © Materials Research Society 1991

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References

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