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A-Si:H Films Deposited by Dc-Masd Technique at High Substrate Temperature
Published online by Cambridge University Press: 10 February 2011
Abstract
Dc-magnetron assisted silane decomposition technique has been tested for deposition of undoped a-Si:H at substrate temperature Ts=300–400°C. In the optimized conditions device-quality a-Si: H films were deposited independently of Ts. A low hydrogen content CH (up to 2 at.°) and microstructure variations are characteristic of the MASD films.
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- Copyright © Materials Research Society 1996
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