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Atomic Layer Deposited Hybrid Organic-Inorganic Aluminates as Potential Low-k Dielectric Materials

Published online by Cambridge University Press:  25 May 2015

Karina B. Klepper ,
Ville Miikkulainen ,
Ola Nilsen ,
Helmer Fjellvåg ,
Ming Liu ,
Dhanadeep Dutta ,
David Gidley ,
William Lanford ,
Liza Ross  and
Han Li
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Karina B. Klepper
Affiliation:
Department of Chemistry, Center for Materials Science and Nanotechnology, University of Oslo, Oslo, Norway
Ville Miikkulainen
Affiliation:
Department of Chemistry, Center for Materials Science and Nanotechnology, University of Oslo, Oslo, Norway
Ola Nilsen
Affiliation:
Department of Chemistry, Center for Materials Science and Nanotechnology, University of Oslo, Oslo, Norway
Helmer Fjellvåg
Affiliation:
Department of Chemistry, Center for Materials Science and Nanotechnology, University of Oslo, Oslo, Norway
Ming Liu
Affiliation:
Department of Physics, University of Michigan, Ann Arbor, MI, U.S.A.
Dhanadeep Dutta
Affiliation:
Department of Physics, University of Michigan, Ann Arbor, MI, U.S.A.
David Gidley
Affiliation:
Department of Physics, University of Michigan, Ann Arbor, MI, U.S.A.
William Lanford
Affiliation:
Department of Physics, University of Albany, Albany, NY, U.S.A.
Liza Ross
Affiliation:
Logic Technology Development, Intel Corporation, Hillsboro, OR, U.S.A.
Han Li
Affiliation:
Logic Technology Development, Intel Corporation, Hillsboro, OR, U.S.A.
Sean W. King
Affiliation:
Logic Technology Development, Intel Corporation, Hillsboro, OR, U.S.A.
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Abstract

The material properties of atomic layer deposited hybrid organic-inorganic aluminate thin films have been evaluated for potential low dielectric constant (i.e. low-k) applications. The hybrid aluminates were deposited using trimethyl aluminum and various linear and aromatic carboxylic acids. The observed electrical and mechanical properties for the hybrid aluminate films varied greatly depending on the selected organic acid with k values ranging from 2.5 to 5.1 and Young’s modulus ranging from 6 to 40 GPa. Leakage currents as low as 4 x 10-10 A/cm2 (at 2 MV/cm) were obtained for films grown using saturated linear carboxylic acids. These results suggest the potential of ALD hybrid aluminate thin films for low-k dielectric applications.

Keywords

atomic layer depositiondielectricelastic properties
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1791: Symposium BB – Innovative Interconnects/Electrodes for Advanced Devices, Flexible and Green-Energy Electronics , 2015 , pp. 15 - 20
Copyright
Copyright © Materials Research Society 2015 

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