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Atomic Structure of Dislocations and Dipoles in Silicon

Published online by Cambridge University Press:  26 February 2011

A. S. Nandedkar
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7916, U.S.A.
J. Narayan
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7916, U.S.A.
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Abstract

Dislocations of a/2<110> Burgers vectors lying in {001} and {111} planes in the form of cross-grids are often observed in ion implanted and thermally annealed specimens. In order to asses the mechanism of formation of these dislocations, we have calculated energies and determined atomic core structuresof a/2<110>{001} edge dislocations and their dipoles,and of a/2<110>{111} dislocations in silicon by minimizing the total configurational energy.

Type
Research Article
Copyright
Copyright © Materials Research Society 1988

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References

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