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Atomie and Electron Structure of Diamond Grain boundaries in a Polycrystalline Film

Published online by Cambridge University Press:  10 February 2011

Hideki Ichinose ,
Megumi Nakanose  and
Yaogan Zhang
Hideki Ichinose
Affiliation:
Department of Materials Science, The University of Tokyo, 7–3–1 Hongo, Bunkyo-ku, Tokyo 113, Japan
Megumi Nakanose
Affiliation:
Aerospace division, Space System Department, Nissan Motor Co. Ltd., 2–5–1 Momoi, Suginami-ku, Tokyo 167, Japan
Yaogan Zhang
Affiliation:
Department of Materials Science, The University of Tokyo, 7–3–1 Hongo, Bunkyo-ku, Tokyo 113, Japan
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Abstract

A polycrystalline diamond film was grown on the polished surface of silicon substrate in H2-CO-O2 mixing gas. Atomic and electron structure of grain boundaries in the film was investigated by both high resolution electron microscopy and electron energy loss spectroscopy. CSL boundaries in the film showed characteristic feature in atomic structure; Σ 9 CSL boundary was parallel not to (221) plane but to (114) plane. A new line which correspond to π * state was found in addition to major σ * line in the EELS spectra of the boundary which contained three coordinate atoms. Observed π * line shows occurred change of a dangling bond (pz electron) to π state. No π * line appeared in the EELS spectra obtained from boundaries which contained no three coordinate atom such as (111) Σ 3 boundary.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 472: Symposium I – Polycrystalline Thin Films - Structure, Texture, Properties..III , 1997 , 93
Copyright
Copyright © Materials Research Society 1997

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References

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