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Atomistic Calculation of Stability and Metastability of Coherently Strained Silicon-Like Structures

Published online by Cambridge University Press:  26 February 2011

Brian W. Dodson  and
Paul A. Taylor
Brian W. Dodson
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico 87185
Paul A. Taylor
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico 87185
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Abstract

Monte Carlo based microscopic techniques were used to study the stability and metastability of thin coherently strained layers of mismatched siliconlike semiconductor material grown on the (111) silicon surface. The structural energy was calculated using three-body empirical potentials. For layers greater than about 20 Å thickness, the critical layer thickness associated with thermodynamic stability agrees quantitatively with continuum theory. For thinner layers, however, considerable variations from the continuum theory are found. For a strained layer six monolayers thick, the test system is found to be metastable against the nucleation of misfit dislocations to a lattice mismatch of about 11%, compared to the 4% equilibrium stability limit.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 77: Symposium D – Interfaces, Superlattices, and Thin Films , 1986 , 449
Copyright
Copyright © Materials Research Society 1987

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References

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