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Automatic Determination of In-Depth Profiles of Recombination Lifetime in Epitaxial Si Layer with P+-N−-N+ Stripe Test Pattern Diodes

Published online by Cambridge University Press:  15 February 2011

Akira Usami ,
Yoshimaro Fujii ,
Hideki Fujiwara ,
Tomiyasu Sone  and
Takao Wada
Akira Usami
Affiliation:
Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
Yoshimaro Fujii
Affiliation:
HAMAMATSU PHOTONICS K.K., 1126-1, Ichino-cho, Hamamatsu 435, Japan
Hideki Fujiwara
Affiliation:
Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
Tomiyasu Sone
Affiliation:
Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
Takao Wada
Affiliation:
Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
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Abstract

Recombination lifetime of a epitaxial layer (epilayer) is automatically measured by using the conductivity modulation technique. A lateral p+-n−-n+ diode test structure on the surface of the epilayer is formed to evaluate the minority carrier lifetime. Depth profiles of the recombination lifetime are obtained from current-voltage curves of a lateral p+-n−-n+ diode and a vertical n+-n−-n+ structure between the substrate and the top surface. We measure the lifetime in epilayers with and without a buffer-layer. In addition, photo-response of photodiodes with and without the buffer-layer is measured. Profiles of the recombination lifetime depend on the thickness of the epilayer but not on the thickness of the buffer-layer. Minority carrier lifetime in the epilayer, and the leakage current and the photo-response of photodiodes are improved by the buffer-layer formation between epilayer and substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 225: Symposium G – Materials Reliability Issues in Microelectronics , 1991 , 265
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

1. Slotboom, J.W., Theuniseen, M.J.J. and de kock, A.J.R., IEEE EDL–4 403 (1983)Google Scholar
2. Usami, A., Yamada, N., Matsuki, K., Takeuchi, T. and Wada, T., Mat. Res. Soc. Symp. Proc. 146 (1989) 359 Google Scholar
3. Usami, A., Yamada, N., Matsuki, K., Takeuchi, T. and Wada, T., J. Crystal Growth 103 (1990) 179 Google Scholar
4. Wijaranakula, W. and Aminzaden, M., J.Appl.Phys 67 1556–1569 (1990)Google Scholar
5. Aminzaden, M. and Forbes, L., IEEE trans. Electron Devices ED–35 518 (1988)Google Scholar
6. Aoyama, M., Mano, M., Sakai, N., Nishi, H. and Usami, A., Extended Abstract (The 38th Spring Meeting, 1982); The Japanese Society of Applied Physics and Related Societies)Google Scholar
7. Spirito, P. and Cocorullo, G., IEEE trans. Electron Devices ED–32 1708 (1985)Google Scholar
8. Bellone, S., Caruso, A., Spirito, P. and Vistale, G., Solid-state Electronics 26 403 (1983)Google Scholar
9. Grove, A.S., “Physics and Technology of Semiconductor Devices” p.78 Wiley, New York. 1967.Google Scholar