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Band alignment at amorphous/crystalline silicon hetero-interfaces

Published online by Cambridge University Press:  27 June 2011

L. Korte ,
T. F. Schulze ,
C. Leendertz ,
M. Schmidt  and
B. Rech
L. Korte
Affiliation:
Helmholtz-Zentrum Berlin für Materialien und Energie, Institut Silizium Photovoltaik, Kekuléstr. 5, D-12489 Berlin, Germany
T. F. Schulze
Affiliation:
Helmholtz-Zentrum Berlin für Materialien und Energie, Institut Silizium Photovoltaik, Kekuléstr. 5, D-12489 Berlin, Germany
C. Leendertz
Affiliation:
Helmholtz-Zentrum Berlin für Materialien und Energie, Institut Silizium Photovoltaik, Kekuléstr. 5, D-12489 Berlin, Germany
M. Schmidt
Affiliation:
Helmholtz-Zentrum Berlin für Materialien und Energie, Institut Silizium Photovoltaik, Kekuléstr. 5, D-12489 Berlin, Germany
B. Rech
Affiliation:
Helmholtz-Zentrum Berlin für Materialien und Energie, Institut Silizium Photovoltaik, Kekuléstr. 5, D-12489 Berlin, Germany
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Abstract

We present an investigation of the band offsets in amorphous/crystalline silicon heterojunctions (a-Si:H/c-Si) using low energy photoelectron spectroscopy, ellipsometry and surface photovoltage data. For a variation of deposition conditions that lead to changes in hydrogen content and the thereby the a-Si:H band gap by ∼180 meV, we find that mainly the conduction band offset ΔEV varies, while ΔEC stays constant within experimental error. This result can be understood in the framework of charge neutrality (CNL) band lineup theory.

Keywords

amorphousSielectronic structure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1321: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology , 2011 , mrss11-1321-a15-03
Copyright
Copyright © Materials Research Society 2011

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References

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