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Boron Enhanced Diffusion Due to High Energy Ion-Implantation and Its Suppression by Using RTA Process
Published online by Cambridge University Press: 21 February 2011
Abstract
SIMS measurements revealed that high energy boron-implantation causes transient enhanced diffusion (TED) of a shallow dopant profile due to Si interstitials even for a relatively low dose of ∼2E13cm-2. By systematic analysis, it is found that this anomalous diffusion is most significant in 700∼800°C annealing, and it takes place in the initial stage (less than 30sec for 800°C) of annealing. Moreover, this anomalous diffusion is more considerable than the enhanced diffusion during oxidation (OED) in practical device fabrication processes. It is found that rapid thermal annealing (RTA) at 1000-1100°C is effective for suppressing the transient enhanced diffusion and realizing a shallow channel profile for deep sub-micron devices.
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- Copyright © Materials Research Society 1995
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